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MRF1517NT1 - RF Power Field Effect Transistor

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Overview

Freescale Semiconductor Technical Data Document Number: MRF1517N Rev.

5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz.

The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment.

Key Features

  • Characterized with Series Equivalent Large - Signal G Impedance Parameters.
  • Excellent Thermal Stability.
  • Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517NT1 520 MHz, 8 W, 7.5 V.

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