MRF1517NT1 Description
Freescale Semiconductor Technical Data Document Number: 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, mon source amplifier applications in 7.5 volt portable FM equipment.
MRF1517NT1 Key Features
- Characterized with Series Equivalent Large
- Signal G Impedance Parameters
- Excellent Thermal Stability
- Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel
- CHANNEL BROADBAND RF POWER MOSFET
- 03, STYLE 1 PLD
- 1.5 PLASTIC