Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF1550N Rev. 11, 9/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon source amplifier applications in 12.5 volt mobile FM equipment.
- Specified Performance @ 175 MHz, 12.5 Volts Output Power
- 50 Watts Power Gain
- 12 dB Efficiency
- 50%
- Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive Features
- Excellent Thermal Stability
- Characterized with Series Equivalent...