MRF1570NT1
MRF1570NT1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Broadband
- Full Power Across the Band: 135
- 175 MHz .. 400
- 470 MHz
- Broadband Demonstration Amplifier Information Available Upon Request
- 200_C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. Ro HS pliant.
- In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1570NT1 MRF1570FNT1
470 MHz, 70 W, 12.5 V LATERAL N
- CHANNEL BROADBAND RF POWER MOSFETs
CASE 1366
- 05, STYLE 1 TO
- 272
- 8 WRAP PLASTIC MRF1570NT1
CASE 1366A
- 03, STYLE 1 TO
- 272
- 8 PLASTIC MRF1570FNT1
Table 1. Maximum Ratings
Rating Drain
- Source Voltage Gate
- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +0.5, +40 ± 20 165 0.5
- 65 to +150 200 Unit Vdc Vdc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.29 Unit °C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22
- A113, IPC/JEDEC J
- STD
- 020 Rating 1 Package Peak Temperature 260 Unit °C
1. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
© Freescale Semiconductor, Inc., 2008. All rights...
