Download the MRF1570FNT1 datasheet PDF.
This datasheet also covers the MRF1570NT1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.
Key Features
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Broadband - Full Power Across the Band: 135 - 175 MHz www. DataSheet4U. com 400 - 470 MHz.
Broadband Demonstration Amplifier Information Available Upon Request.
200_C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1570NT1 MRF1.
Note: The manufacturer provides a single datasheet file (MRF1570NT1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MRF1570FNT1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MRF1570FNT1. For precise diagrams, and layout, please refer to the original PDF.
Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed ...
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t Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 11.5 dB Efficiency — 60% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband - Full P
More Datasheets from Freescale Semiconductor (now NXP Semiconductors)
MRF1570FNT1 Datasheet
