MRF18090BR3 Datasheet | Freescale Semiconductor

Features - Internally Matched for Ease of Use - High Gain, High Efficiency and High Linearity - Integrated ESD Protection .. - Designed for Maximum Gain and Insertion Phase Flatness - Excellent Thermal Stability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18090BR3 MRF18090BSR3 - 1.99 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETS CASE 465B - 03, STYLE 1 NI - 880 MRF18090BR3 CASE 465C - 02, STYLE 1 NI - 880S MRF18090BSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18090BR3 MRF18090BSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 m Adc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) .. Dynamic Characteristics Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 m V(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) mon- Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 m A, f = 1930 - 1990 MHz) Drain Efficiency @ 90 W (1) (VDD = 26...