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Freescale Semiconductor Electronic Components Datasheet

MRF18090BR3 Datasheet

LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
www.DataShDeeesti4gUn.cedomfor Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF18090B
Rev. 7, 5/2006
MRF18090BR3
MRF18090BSR3
1.90 - 1.99 GHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETS
CASE 465B - 03, STYLE 1
NI - 880
MRF18090BR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
CASE 465C - 02, STYLE 1
NI - 880S
MRF18090BSR3
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Value
0.7
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
MRF18090BR3 MRF18090BSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF18090BR3 Datasheet

LATERAL N-CHANNEL RF POWER MOSFETs

No Preview Available !

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
www.Da(tVaDSShe=e1t04UV.dcco,mID = 3 Adc)
Dynamic Characteristics
V(BR)DSS
65
— Vdc
IDSS
10 μAdc
IGSS
1 μAdc
VGS(Q)
2.5
3.7
4.5
Vdc
VDS(on)
0.1
Vdc
gfs — 7.2 — S
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture)
Common- Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz)
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 - 1990 MHz)
Crss — 4.2 — pF
Gps dB
12 13.5 —
η%
40 45 —
IRL dB
— — - 10
1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch
consistency.
MRF18090BR3 MRF18090BSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF18090BR3
Description LATERAL N-CHANNEL RF POWER MOSFETs
Maker Freescale Semiconductor
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