MRF6P21190HR6 Key Features
- a s s A B f o r P C N - P C S / c e
- a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x
MRF6P21190HR6 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
| Part Number | Description |
|---|---|
| MRF6P23190HR6 | RF Power Field Effect Transistor |
| MRF6P24190HR6 | RF Power Field Effect Transistor |
| MRF6P27160HR6 | RF Power Field Effect Transistor |
| MRF6P18190HR6 | RF Power Field Effect Transistor |
| MRF6P3300HR3 | N-Channel MOSFET |
Freescale Semiconductor Technical Data Document Number: 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.