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MRF6P23190HR6 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev.

2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz.

Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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