MRF6P3300HR3 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large-Signal Impedance Parameters - Internally Matched for Ease of Use - Designed for Push-Pull Operation Only - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3 MRF6P3300HR5 470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 375G-04, STYLE 1 NI-860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic VDSS VGS Tstg TC TJ Symbol -0.5, +68 -0.5, +12 -ā65 to +150 150 225 Value (2,3) Vdc Vdc °C °C °C Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 300 W CW Case Temperature 82°C, 220 W CW Case Temperature 79°C, 100 W CW Case Temperature 81°C, 60 W CW RθJC 0.23 0.24 0.27 0.27 °C/W ăĂ1. Continuous use at maximum temperature will affect MTTF. Ăă2. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6P3300HR3 MRF6P3300HR5 1 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 3. ESD Protection Characteristics Test Methodology Class...