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MRF6P3300HR3 - N-Channel MOSFET

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Designed for Push-Pull Operation Only.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3 MRF6P3300HR5 470-860 MHz, 300.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6P3300HR5 N-Channel MOSFET
MRF6P18190HR6 RF Power Field Effect Transistor
MRF6P21190HR6 RF Power Field Effect Transistor
MRF6P23190HR6 RF Power Field Effect Transistor
MRF6P24190HR6 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with fre‐ quencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applica‐ tions in 32 volt analog or digital television transmitter equipment. • Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP ąPower Gain — 20.2 dB ąDrain Efficiency — 44.1% ąIMD — -30.
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