Datasheet4U Logo Datasheet4U.com

MRF6P24190HR6 - RF Power Field Effect Transistor

Description

Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M63V CRCW12062400FKTA Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Vishay MRF6P24190HR6 RF Device Data Freescal

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P24190HR6 2450 MHz, 190 W, 28 V CW.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF604 HIGH FREQUENCY TRANSISTOR Motorola
MRF604 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
MRF607 HIGH FREQUENCY TRANSISTOR Motorola
MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology
MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6P21190HR6 RF Power Field Effect Transistor
MRF6P23190HR6 RF Power Field Effect Transistor
MRF6P27160HR6 RF Power Field Effect Transistor
MRF6P18190HR6 RF Power Field Effect Transistor
MRF6P3300HR3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain — 13.2 dB Drain Efficiency — 46.2% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel.
Published: |