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MRF6P24190HR6 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev.

1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz.

Device is suitable for use in industrial, medical and scientific applications.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P24190HR6 2450 MHz, 190 W, 28 V CW.

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