MRF6P24190HR6 Description
Freescale Semiconductor Technical Data Document Number: 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
MRF6P24190HR6 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- RoHS pliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
- CHANNEL RF POWER MOSFET
- 05, STYLE 1 NI
- Source Voltage Gate