MRF6P27160HR6 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. - Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900 m A, Pout = 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 14.6 d B Drain Efficiency - 22.6% ACPR @ 885 k Hz Offset - - 47.8 d Bc @ 30 k Hz Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched, Controlled Q, for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications - Low Gold Plating Thickness on Leads, 40µ″ Nominal. - In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 2700 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 603 3.45 - 65 to +150 200 160 Unit Vdc Vdc W W/°C °C °C W Table 2. Thermal Characteristics...