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MRF6P27160HR6 - RF Power Field Effect Transistor

Description

Beads, Surface Mount 5.6 pF Chip Capacitors 3.3 pF Chip Capacitors 0.01 µF Chip Capacitors (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Chip Capacitors 47 µF, 16 V Tantalum Chip Capacitors 4.3 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor

Features

  • 16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz 10 30 32 V 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100 20 0 ηD.
  • 5 0.1 10 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P27160HR6 6 Figure 11. Power Gain versus Output Power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.6 dB Drain Efficiency — 22.6% ACPR @ 885 kHz Offset — - 47.
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