MRF6P27160HR6 Description
Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.
MRF6P27160HR6 Key Features
- a s s A B f o r P C N - P C S / c e
- a r r a d i o a n d W L L applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =