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MRF6P27160HR6 Datasheet

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)
MRF6P27160HR6 datasheet preview

Datasheet Details

Part number MRF6P27160HR6
Datasheet MRF6P27160HR6_FreescaleSemiconductor.pdf
File Size 446.20 KB
Manufacturer Freescale Semiconductor (now NXP Semiconductors)
Description RF Power Field Effect Transistor
MRF6P27160HR6 page 2 MRF6P27160HR6 page 3

MRF6P27160HR6 Overview

Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.

MRF6P27160HR6 Key Features

  • a s s A B f o r P C N - P C S / c e
  • a r r a d i o a n d W L L applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
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MRF6P27160HR6 Distributor

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