MRF6P27160HR6 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF6P27160HR6
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	446.20 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6P27160HR6 Datasheet

Freescale Semiconductor Technical Data MRF6P27160H Rev.

0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with.

16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz 10 30 32 V 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100 20 0 ηD.
5 0.1 10 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P27160HR6 6 Figure 11. Power Gain versus Output Power.

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