Datasheet4U Logo Datasheet4U.com

MRF6P3300HR5 Datasheet N-Channel MOSFET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF6P3300HR5 datasheet PDF. This datasheet also includes the MRF6P3300HR3 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6P3300HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5.

Refer to Device Migration PCN12895 for more details.

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with fre‐ quencies from 470 to 860 MHz.

Key Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Designed for Push-Pull Operation Only.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3 MRF6P3300HR5 470-860 MHz, 300.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6P3300HR3 N-Channel MOSFET
MRF6P18190HR6 RF Power Field Effect Transistor
MRF6P21190HR6 RF Power Field Effect Transistor
MRF6P23190HR6 RF Power Field Effect Transistor
MRF6P24190HR6 RF Power Field Effect Transistor
MRF6P27160HR6 RF Power Field Effect Transistor
MRF6P9220HR3 RF Power Field Effect Transistor
MRF6S18060MBR1 RF Power Field Effect Transistors
MRF6S18060MR1 RF Power Field Effect Transistors
MRF6S18060NBR1 RF Power Field Effect Transistors