datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Freescale Semiconductor Electronic Components Datasheet

MRF6P23190HR6 Datasheet

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

No Preview Available !

MRF6P23190HR6 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
TP3.yo8pu4tic=Mal4H20z-,WCPaaAtrtRrsie=Ar vW8g.5.-,CdFDBuMl@lAF0rPe.e0qr1uf%oernmPcyaronBbcaaenb:diVl,itDyCDho=ann2Cn8CeVlDBoFla.tsn,dIwDQidt=h
1900
=
mA,
Power Gain — 14 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6P23190H
Rev. 2, 3/2007
MRF6P23190HR6
2300 - 2400 MHz, 40 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
www.DataSheet4U.com
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
Tstg
TC
TJ
CW
- 0.5, +68
- 0.5, +12
- 65 to +150
150
200
250
1.3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
0.22
0.24
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
1


Freescale Semiconductor Electronic Components Datasheet

MRF6P23190HR6 Datasheet

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

No Preview Available !

MRF6P23190HR6 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics(1)
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage(1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage(3)
(VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4 Vdc
Drain - Source On - Voltage(1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.5 — pF
Functional Tests(3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps 13 14 16 dB
Drain Efficiency
ηD 22 23.5 — %
Intermodulation Distortion
IM3
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
- 41 - 38 dBc
Input Return Loss
IRL — - 13 — dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF6P23190HR6
2
RF Device Data
Freescale Semiconductor


Part Number MRF6P23190HR6
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Maker Freescale Semiconductor
Total Page 11 Pages
PDF Download
MRF6P23190HR6 pdf
MRF6P23190HR6 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 MRF6P23190HR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor
Freescale Semiconductor
MRF6P23190HR6 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy