MRF6P24190HR6 Datasheet (RF Power Field Effect Transistor)

Part: MRF6P24190HR6
Manufacturer: Freescale Semiconductor
Size: 389.47 KB

MRF6P24190HR6 Key Features

Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS pliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
CHANNEL RF POWER MOSFET
05, STYLE 1 NI
Source Voltage Gate

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MRF6P24190HR6 Description

Freescale Semiconductor Technical Data Document Number: 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.