Datasheet Summary
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details.
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with fre‐ quencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, mon- source amplifier applica‐ tions in 32 volt analog or digital television transmitter equipment.
- Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts,
IDQ = 1600 mA, Pout = 270 Watts PEP ąPower Gain
- 20.2 dB ąDrain Efficiency
-...