MRF6P3300HR5 Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with fre‐ quencies from 470 to 860 MHz.
MRF6P3300HR5 Key Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Designed for Push-Pull Operation Only
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel
- 0.5, +68 -0.5, +12 -ā65 to +150
- AN1955