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MRF6S18060NBR1 - RF Power Field Effect Transistors

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Freescale Semiconductor

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MRF6S18060NBR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF6S18060NBR1

Datasheet Details

Part number	MRF6S18060NBR1
Manufacturer	Freescale Semiconductor
File Size	837.87 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S18060NBR1 Datasheet
Additional preview pages of the MRF6S18060NBR1 datasheet.

Product details

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
225°C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S18060N Rev. 4, 12/2008 MRF6S18060NR1 MRF6S18060NBR1 1800- 2000 MHz, 60.

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Published: Jun 10, 2009 |