* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* N Suffix Indicates Lead - Free
MRF6S18060NBR1 Datasheet (837.87 KB)
MRF6S18060NBR1
Freescale Semiconductor
837.87 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .
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