MRF6S18060NR1 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application Typical GSM Performance:.
MRF6S18060NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- CHANNEL RF POWER MOSFETs