MRF6S18060NR1, MRF6S18060NBR1 Datasheet - Freescale Semiconductor

MRF6S18060NR1 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz Power Gain 15 dB Drain Efficiency - 50% GSM EDGE Application Typical GSM EDGE Performa.

MRF6S18060NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* N Suffix Indicates Lead - Free

MRF6S18060NBR1_FreescaleSemiconductor.pdf

MRF6S18060NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S18060NR1, MRF6S18060NBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6S18060NR1, MRF6S18060NBR1

Manufacturer:

Freescale Semiconductor

File Size:

837.87 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF6S18060NR1, MRF6S18060NBR1.
Please refer to the document for exact specifications by model.

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MRF6S18060NR1 MRF6S18060NBR1 Power Field Effect Transistors Freescale Semiconductor

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