MRF6S18140HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF6S18140HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF6S18140HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	449.32 KB
Description	RF Power Field Effect Transistors
Download	MRF6S18140HR3 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev.

0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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