This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRF6S19140HSR3 |
|---|---|
| Datasheet | MRF6S19140HSR3 MRF6S19140HR3 Datasheet (PDF) |
| File Size | 399.61 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | N-Channel Enhancement-Mode Lateral MOSFETs |
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Freescale Semiconductor Technical Data Document Number: 2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF6S19140HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3 | RF Power Field Effect Transistors |
| MRF6S19100HSR3 | RF Power Field Effect Transistors |
| MRF6S19100NBR1 | RF Power Field Effect Transistors |
| MRF6S19100NR1 | RF Power Transistors |
| MRF6S19120HR3 | RF Power Transistors |
| MRF6S19120HSR3 | RF Power Transistors |
| MRF6S19060NBR1 | RF Power Field Effect Transistors |
| MRF6S19060NR1 | RF Power Field Effect Transistors |
| MRF6S19200HR3 | RF Power Transistors |
