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MRF6S19140HSR3 - N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF6S19140HSR3 datasheet PDF (MRF6S19140HR3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement-mode lateral mosfets.

Description

Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitors 470 µF, 63 V Electrolytic Capacitor 560 kΩ, 1/8 W Chip Resistors (1206) 1.0 kΩ, 1/8 W Chip Resistors (1206) 12 Ω, 1/8 W Chip Resistors (1206) Part Number 274301944

Features

  • 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 ηD, DRAIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S19140HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.
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