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MRF7S15100HSR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF7S15100HSR3 datasheet PDF. This datasheet also includes the MRF7S15100HR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF7S15100HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev.

0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Optimized for Doherty.

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