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MRF9045LSR1 - RF Power FET

Download the MRF9045LSR1 datasheet PDF. This datasheet also covers the MRF9045LR1 variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9045 Rev. 11, 9/2008 MRF9045LR1 MRF9045LSR1 945 MHz, 45 W, 28 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9045LR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF904 NPN SILICON RF TRANSISTOR ASI
MRF904 HIGH FREQUENCY TRANSISTOR Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9045LR1 RF Power FET
MRF9045NR1 RF Power Field Effect Transistor
MRF9002NR2 RF Power FET
MRF9030LR1 RF Power Field Effect Transistor
MRF9030MBR1 RF Power Field Effect Transistors

Full PDF Text Transcription

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LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 28 volt base station equipment. • Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.
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