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Freescale Semiconductor Electronic Components Datasheet

MRFE6S9045NR1 Datasheet

RF Power FET

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large - signal, common - source amplifier applications
in 28 volt base station equipment.
Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
Pout = 16 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRFE6S9045N
Rev. 0, 10/2007
MRFE6S9045NR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
- 0.5, +66
Vdc
VGS
- 0.5, + 12
Vdc
VDD
32, +0
Vdc
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
°C/W
1.0
1.1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
1


Freescale Semiconductor Electronic Components Datasheet

MRFE6S9045NR1 Datasheet

RF Power FET

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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
1
μAdc
IGSS
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VGS(th)
1
2
3
Vdc
VGS(Q)
2.3
3.1
3.8
Vdc
VDS(on)
0.05
0.23
0.3
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Crss
1.02
pF
Coss
27
pF
Ciss
81
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
21
22.1
25
dB
Drain Efficiency
ηD
30.5
32
%
Adjacent Channel Power Ratio
ACPR
- 46
- 44
dBc
Input Return Loss
IRL
- 19
-9
dB
(continued)
MRFE6S9045NR1
2
RF Device Data
Freescale Semiconductor


Part Number MRFE6S9045NR1
Description RF Power FET
Maker Freescale Semiconductor
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