MRFE6S9045NR1 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier N - CDMA Performance @...
MRFE6S9045NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- CHANNEL BROADBAND
- 2 PLASTIC
- Source Voltage Gate
- Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Tempera