Datasheet4U Logo Datasheet4U.com

MRFE6S9045NR1 - RF Power FET

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9045N Rev. 0, 10/2007 MRFE6S9045NR1 880 MHz, 10 W AVG. , 28 V SINGLE N - CDMA.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRFE6S9200HR3 RF Power FET Motorola Semiconductor Products
MRFE6S9200HSR3 RF Power FET Motorola Semiconductor Products
MRFE6S9201HR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRFE6S9201HSR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRFE6S8046GNR1 RF Power Field Effect Transistors Freescale

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S9060NR1 RF Power FET
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR3 RF Power FET
MRFE6S9130HSR3 RF Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.