MRFE6S9135HR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. - Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on...