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Freescale Semiconductor Electronic Components Datasheet

MRFE6S9135HR3 Datasheet

N-Channel Enhancement-Mode Lateral MOSFETs

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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
Capable of
(3 dB Input
Handling 10:1 VSWR,
Overdrive from Rated
@ 32
Pout),
Vdc, 940
Designed
MfoHr zE,nPhoaunt c=e1d8R0uWggCedWness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9135H
Rev. 1, 11/2007
MRFE6S9135HR3
MRFE6S9135HSR3
940 MHz, 39 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9135HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9135HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 136 W CW
Case Temperature 80°C, 39 W CW
RθJC
0.39
0.48
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRFE6S9135HR3 Datasheet

N-Channel Enhancement-Mode Lateral MOSFETs

No Preview Available !

Table 3. ESD Protection Characteristics
www.DataSheet4U.com
Test Methodology
Class
Human Body Model (per JESD22 - A114)
II (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.8 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
10 μAdc
VGS(th)
1.4
2.1
2.9
Vdc
VGS(Q)
2.2
2.9
3.7
Vdc
VDS(on)
0.15
0.2
0.35
Vdc
Crss — 1.3 —
Coss — 410 —
Ciss — 343 —
pF
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 39 W Avg. W - CDMA, f = 940 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 20 21 23 dB
Drain Efficiency
ηD 30.5 32.3 —
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 6.1 6.4 — dB
Adjacent Channel Power Ratio
ACPR
- 39.5
- 38
dBc
Input Return Loss
IRL — - 15 - 9 dB
1. Part internally matched both on input and output.
(continued)
MRFE6S9135HR3 MRFE6S9135HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRFE6S9135HR3
Description N-Channel Enhancement-Mode Lateral MOSFETs
Maker Freescale Semiconductor
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