• Part: MRFG35002N6AT1
  • Description: Gallium Arsenide PHEMT RF Power Field Effect Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 214.84 KB
Download MRFG35002N6AT1 Datasheet PDF
MRFG35002N6AT1 page 2
Page 2
MRFG35002N6AT1 page 3
Page 3

MRFG35002N6AT1 Key Features

  • Excellent Phase Linearity and Group Delay Characteristics
  • High Gain, High Efficiency and High Linearity
  • RoHS pliant
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel
  • 03, STYLE 1 PLD
  • 1.5 PLASTIC
  • Source Voltage Gate
  • Source Voltage RF Input Power Storage Temperature Range Channel Temperature
  • 65 to +150 175
  • AN1955