Datasheet Summary
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Freescale Semiconductor Technical Data
Available at http://.freescale./rf, Go to Tools Rev. 1, 6/2005
RF Reference Design Library
Gallium Arsenide PHEMT
RF Power Field Effect Transistors
Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications.
- Typical W
- CDMA Performance:
- 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power
- 300 mWatt Power Gain
- 11.5 dB Efficiency
- 25%
- 3 Watts P1dB @ 3.55 GHz
- Excellent...