Datasheet4U Logo Datasheet4U.com

MRFG35005NT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Download the MRFG35005NT1 datasheet PDF. This datasheet also covers the MRFG35005MT1 variant, as both devices belong to the same gallium arsenide phemt rf power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

7.5 pF Chip Capacitors 0.4 pF Chip Capacitor (0805) 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 3.9 µF Chip Capacitors 0.1 µF Chip Capacitors 22 µF, 35 V Tantalum Surface Mount Capacitors 0.1 pF Chip Capacitors (0805) 0.3

Features

  • 99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFG35005MT1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRFG35003M6T1 RF Power Field Effect Transistor Motorola
MRFG35003MT1 RF Power Field Effect Transistor Motorola
MRFG35010MT1 RF Power Field Effect Transistor Motorola
MRF Fast Acting Radial Lead Micro Fuse Series Bel Fuse
MRF-261 High Band VHF FM Power Transistor Eleflow

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFG35005MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35003MT1 RF Power Field Effect Transistors
MRFG35003N6T1 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.5 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations • In Tape and Reel.
Published: |