MRFG35020AR1 transistor equivalent, gallium arsenide phemt rf power field effect transistor.
* Supports up to 28 MHz Bandwidth OFDM Signals
* Internally Input Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Excellent Ther.
that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applicati.
3.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.01 μF Chip Capacitors 39K pF Chip Capacitors 10 μF Chip Capacitors None 1.8 pF Chip Capacitors 1.5 pF Chip Capacitor 6.2 Ω, 1/4 W Chip.
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