Download MRFG35020AR1 Datasheet PDF
MRFG35020AR1 page 2
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MRFG35020AR1 Key Features

  • Supports up to 28 MHz Bandwidth OFDM Signals
  • Internally Input Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Excellent Thermal Stability
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel
  • 01, STYLE 2 NI
  • 360 SHORT LEAD
  • Source Voltage Gate
  • Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol

MRFG35020AR1 Description

Freescale Semiconductor Technical Data Document Number: Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications.