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  Fujitsu Electronic Components Datasheet  

MB85R2001 Datasheet

Memory FRAM CMOS

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FUJITSU MICROELECTRONICS
DATA SHEET
Memory FRAM
CMOS
2 M Bit (256 K × 8)
DS05-13107-4E
MB85R2001
DESCRIPTIONS
The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
FEATURES
• Bit configuration
: 262,144 words × 8 bits
• Read/write endurance
: 1010 times/bit
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : 40 °C to + 85 °C
• Data retention
: 10 years ( + 55 °C)
• Package
: 48-pin plastic TSOP (1)
Copyright©2007-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.8
Free Datasheet http://www.datasheet4u.com/


  Fujitsu Electronic Components Datasheet  

MB85R2001 Datasheet

Memory FRAM CMOS

No Preview Available !

MB85R2001
PIN ASSIGNMENTS
A11
A9
NC
A8
A13
WE
CE2
A15
NC
VCC
NC
NC
GND
NC
NC
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
(TOP VIEW)
(FPT-48P-M25)
48 OE
47 NC
46 GND
45 A10
44 CE1
43 NC
42 I/O8
41 I/O7
40 I/O6
39 I/O5
38 I/O4
37 VCC
36 NC
35 I/O3
34 I/O2
33 I/O1
32 NC
31 NC
30 NC
29 A0
28 A1
27 GND
26 A2
25 A3
PIN DESCRIPTIONS
Pin name
A0 to A17
I/O1 to I/O8
CE1
CE2
WE
OE
VCC
GND
NC
Address Input
Data Input/Output
Chip Enable 1 Input
Chip Enable 2 Input
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Function
2 DS05-13107-4E
Free Datasheet http://www.datasheet4u.com/


Part Number MB85R2001
Description Memory FRAM CMOS
Maker Fujitsu
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MB85R2001 Datasheet PDF






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