2 M Bit (256 K × 8)
The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
• Bit configuration
: 262,144 words × 8 bits
• Read/write endurance
: 1010 times/bit
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : − 40 °C to + 85 °C
• Data retention
: 10 years ( + 55 °C)
: 48-pin plastic TSOP (1)
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