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MB85R2001 - Memory FRAM CMOS

General Description

The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Key Features

  • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V :.
  • 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2007-2009.

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FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit (256 K × 8) MB85R2001 ■ DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.