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MB85R2001 Memory FRAM CMOS

MB85R2001 Description

FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit (256 K × 8) MB85R2001 * .
The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using fe.

MB85R2001 Features

* Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V :
* 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin

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Datasheet Details

Part number
MB85R2001
Manufacturer
Fujitsu
File Size
149.85 KB
Datasheet
MB85R2001_Fujitsu.pdf
Description
Memory FRAM CMOS

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Memory FRAM CMOS Fujitsu
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