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MBM29BS32LF18 - BURST MODE FLASH MEMORY

General Description

The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each.

The device offered in a 60-ball FBGA package.

This device is designed to be programmed in-system with the standard system 1.8V VCC supply.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The Enhanced VI/O (VCCQ) feature allows the output voltage generated on the device to be determined based on the VI/O level. This feature allows this device to operate in the 1.8 V and 3.0 V I/O environment, driving and receiving signals to and from other 1.8 V and 3.0 V devices on the same bus. The device features sing.

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Full PDF Text Transcription for MBM29BS32LF18 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBM29BS32LF18. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M (2M × 16) BIT MBM29BS/BT32LF 18/25 s GENERAL DESCRIPTION The MBM29BS/B...

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(2M × 16) BIT MBM29BS/BT32LF 18/25 s GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. (Continued) s PRODUCT LINE UP Part No. VCC VCCQ Clock Rate Max Latency Time (ns) Synchronous/Burst Max Burst Access Time (ns) Max OE Access Time (ns) Max Address Access Time (ns) Asynchronous Max CE Access Time (ns) Max OE Access Time (ns) MBM29BS/ BT32LF-25 1.8 V +0.15 V –0.15 V MBM29BT32LF-18 MBM29BS3

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