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GE

IGT4E10 Datasheet Preview

IGT4E10 Datasheet

Insulated Gate Bipolar Transistor

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mTM1J~~~
Insulated Gate Bipolar Transistor
IGT4D1 O,E~ ~Jr
10 AMPERES
400, 500 VOLTS
EQUIV. RDS(ON) = 0.27 il
This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state con-
duction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT"M Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25°C and 150°C offering extended power handling capability.
The IGT"M Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Features:
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling -10 amps @ 100°C
N-CHANNEl
c
.~
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
. - - .I:1~g\::~~II~ .05511.391
.04811.nl
.265(6.731
- + - - + - - - t -.24516.221
_
CASE
I- r ........., TERMEFPEERRAENTUCERE
- ,/ POINT
.22015.591
~
.00610.151
.00110.0251
TERM.l
TERM.2
TERM.3
.0331~
1I!bf.l0512.671
.027 ~~ •.09512.411
1+-".05511.391 .1
I+-.04511.141--"
.21015.331
.19014.821
..0021511100..533811
.10712.721
.08712.211
=maximum ratings (TC 25°C) (unless otherwise specified)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mil
Continuous Drain Current @ TC = 100°C
@Tc= 25°C
Pulsed Collector Current(l)
Gate-Emitter Voltage
Total Power Dissipation @Tc= 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
TJ, TSTG
IGT4D10
400
400
10
18
40
±25
75
0.6
-55 to 150
thermal characteristics
Thermal Resistance, Junction to Case
RSJC
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
TL
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
1.67
260
IGT4E10
500
500
10
18
40
±25
75
0.6
-55 to 150
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
°C
1.67 °C/W
260 DC
337




GE

IGT4E10 Datasheet Preview

IGT4E10 Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

electrical characteristics (Tc = 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 250JlA, VGE = OV)
IGT4D10
IGT4E10
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 25°C)
(VCE = Max Rating, x 0.8, VGE = OV, TC = 150°C)1
,
Gate-Emitter Leakage Current
(VGE = ±20V)
BVCES
ICES
IGES
1Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics*
Gate Threshold Voltage
(VCE = VGE, Ic = 250J..lA)
Collector-Emitter Saturation Voltage
Ic = 10 A, Tc = 25°C, VGE = 15V
IC = 10 A, TC = 150°C, VGE = 15V
IC = 10 A, TC = 25°C, VGE = 10V
Tc = 25°C VGE(TH)
Tc = 150°C
VCE(SAT)
400
500
-
-
-
2
-
-
-
-
-
-
-
-
-
4.0
2.5
2.5
2.8
2.9
dynamic characteristics
Input Capacitance VGE = OV
Output Capacitance VCE = 25V
Reverse Transfer
Capacitance
f = 1 MHz
Cies
Coes
Cres
-
-
-
1050
340
10
switching characteristics* (see figures 8 & 9)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn':off Delay Time
Fall Time
Equivalent
Fall Time
Turn-off
Switching Losses
Resistive Load, Tc = 150°C
Ic = 10A, VCE = Rated VCES
VGE = 15V
RG(on) = 500., RGE = 1000.
Inductive Load, Tc = 150°C,
L = 550p.H, Ic = 10A,
VCE(CLAMP) = Rated VCES
VGE = 15V
RG(on) = 500. RGE = 1000. IGT4D10
IGT4E10
'Pulse test: Pulse width :5 300 J..Isec, duty cycle :5 2%. ,
td(on)
tr
td(off)
tf
td(off)
tf
tf(eq)
Ef
-
-
-
-
-
-
-
-
100
150
0.5
4
1.0
4.5
3.5
-
MAX
UNIT
-
-
250
4.,0
±500
Volts
JlA
mA
nA
5 Volts
-
2.7 Volts
-
-
- pF
- pF
- pF
- ns
- ns
- ~s
- J..Is
1.5 p.s
6.5 p's
5.0 p's
10
12.5 mJ
_40r-----~----~ _r _ , , - - - - - r - - - - _ r - - - - _ ,
VGE =12V
35~----+-----+_~~4-~L-~----~----~
I 30 ~----~----I-J-_+_----Af-- T~C:~=:2~5~'C~ ~~~~EC~~L~H:2~0 " .ec
iii _ - i - - - - I , V G P 10v
y 2S~----+-----~~--~~--~----~----~
~ 20~____+-__~4l~~~~~~====~V~GE~=~9V~
B
IE
~ '5r-----+--+.~~--~~~--~-----r.V~GE~=7.eV~
~
8 10 1-----.,1-
VGE =7V
VGE =6V
25r------,-------,--------r------~----~
m2 0 r - - - - - - ; - - - - - - - + - - -
~
~
y 15~----~------~--_+_--~~~--+_----~
Ii
~
5
IE 10~----~------~~~~~------+_----~
I
46 e
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
10
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
O~0--~~~1------~------~------~4------~
COLLECTOR-EMITTER SATURATION VOLTAGE. VCE(SAT). VOLTS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
338


Part Number IGT4E10
Description Insulated Gate Bipolar Transistor
Maker GE
Total Page 4 Pages
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