IGT4E10 Key Features
- Low VCE(SAT)
- 2.5V typ @ 10A
- Ultra-fast turn-on -150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling -10 amps @ 100°C
- I :1~g::~~II~ .05511.391 .04811.nl
- 24516.221
- TERMEFPEERRAENTUCERE
- / POINT
- Part: IGT4E10
- Manufacturer: GE
- Size: 308.85 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT4E11 | Insulated Gate Bipolar Transistor |
| IGT4D10 | Insulated Gate Bipolar Transistor |
| IGT4D11 | Insulated Gate Bipolar Transistor |
| IGT6D10 | Insulated Gate Bipolar Transistor |
| IGT6D11 | Insulated Gate Bipolar Transistor |
IGT4E10 Description
mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to...