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IGT4E11 Datasheet Preview

IGT4E11 Datasheet

Insulated Gate Bipolar Transistor

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mTMlJ~~~~
Insulated Gate Bipolar Transistor
IGT4D11~E11
10 AMPERES
400, 500 VOLTS
EQUIV. ROS(ON} = 0.27 il
This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state con-
duction losses similar to bipolartransistors. The device design
and gate characteristics of the IGT'M Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25° C and 150° C offering extended power handling capability.
The IGT'M Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Features:
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on - 100 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 10 amps @ 100°C
N-CHANNEL
c
o~
E
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
-.--.:~~g\::~;\~ .05511.391
1 .04811.221
.26516.731
.245(6.22:
_
CASE
+ r t ~51/ 1----I----I------!tET---
.35519.021
TEMPE RATURE
REFERENCE
/ POINT
. 1144511133.·65881IDIA.
.32518.251-'
.22015.591
~13.01331
.00110.0251
TERM.1
TERM.2
;'!1II'.n-~
.500(12.7IMIN.
TEAM.3
.0331~.841
.02710.691
. 1~h J - - . 1 0•5.10925.162.74111
\+---.0551.39 .1 \+---' .210(5.331
.0451.141---'
.19014.821
.10712.721
.087(2.21}
=maximum ratings (TC 25° C) (unless otherwise specified)
RATING
=Collector-Emitter Voltage, VGE OV
=Collector-Gate Voltage, RGE 1Mil
Continuous Drain Current@Tc = 100°C
@Tc= 25°C
Pulsed Collector Current(l)
Gate-Emitter Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
TJ, TSTG
IGT4011
400
400
10
18
40
±25
75
0.6
-55 to 150
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
ROJC
TL
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
1.67
260
IGT4E11
500
500
10
18
40
±25
75
0.6
-55 to 150
UNITS
Volts
Volts
A
A
A
Volts
. Watts
W/oC
°C
1.67
260
°C/W
°C
341




GE

IGT4E11 Datasheet Preview

IGT4E11 Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Collector-Emitter Breakdown Voltage .
VGE = OV, Ic. = 2S0pA)
IGT4D11
IGT4E11
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 2S°C)
(VCE = Max Rating, x 0.8, VGE = OV, Tc = 1S0°C)'
Gate-Emitter Leakage Current
(VGE = ±20V)
BVCES
ICES
IGES
1 Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics*
Gate Threshold Voltage
(VCE = VGE, Ic = 2S0/-lA)
Collector-Emitter Saturation Voltage
IC = 10A, Tc = 2SoC, VGE = 1SV
IC = 10 A, Tc = 1S0°C, VGE = 1SV
Ic = 10 A, TC = 2SoC, VGE = 10V
Tc = 2SOC VGE(TH)
Tc = 1S0°C
VCE(SAT)
400
soo
-
-
-
2
-
-
-
-
-
-
-
-
-
4.0
2.S
2.S
2.8
2.9
dynamic characteristics
Input Capacitance VGE = OV
Output Capacitance VCE = 2SV
Reverse Transfer
Capacitance
f = 1 MHz
Cies
Coes
Cres
-
-
-
10S0
340
10
switching characteristics* (see figures 8 & 9)
Turn-on Delay Time Resistive Load TC = 12So C
Rise Time
IC = 10A, VCE = Rated VCES
Turn-off Delay Time .VGE=1SV
Fall Time
RG(on) = SO~, RGE = 1000.
Turn-off Delay Time
Fall Time
Inductive Load, Tc= 12SoC,
L = 5S0/-lH, Ic = 10A,
VCE(CLAMP) = Rated VCES
Equivalent
Fall Time
Turn-off
Switching Losses
VGE = 15V
RG(on) =500., RGE = 1000.
IGT4D11
IGT4E11
'Pulse test: Pulse width :5 300 ILsec, duty cycle :5 2%.
td(on)
tr
td(off)
tf
td(off)
tf
tf(eq)
Ef
-
-
-
-
-
-
-
-
100
100
0.4
2.5
0.8
0.8
0.6
1.3
1.6
MAX
-
-
2S0
4.0
±SOO
S
-
2.7
-
-
-
-
-
-
-
-
-
1.2
1.0
0.8
1.6
2.0
UNIT
Volts
pA
mA
nA
Volts
Volts
pF
pF
pF
ns
ns
/-IS
/-Is
p,s
/-Is
/-Is
mJ
40r-----.-----~--~~~--~r-----~----,
VGE =12V
35r-----+------r~~1+~~~~----+_----~
VGE =BV
VGe=6V
oI~___~~~:;~;;;;;t~~;db;~~tV~G~E=V~GE5=4~V V~
o 4 6 B 10
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
25r------,-------.------~------~------~
m20r------+--~---r---
~
~
§ '5~------r_----~r-~~~~~--~------~
ffi
aa::
il
;a: 10~----~r_----~~~~~------~------~
8
°0~--~~~,r-----~~----~3------~4------~
COLLECTOR·EMITTER SATURATION VOLTAGE. VCE(SAn. VOLTS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
342


Part Number IGT4E11
Description Insulated Gate Bipolar Transistor
Maker GE
Total Page 4 Pages
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