* Low VCE(SAT) - 2.3V typ @ 20A
* Ultra-fast turn-on - 200 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC =
IGT8D20
GE
290.75 KB
Insulated gate bipolar transistor.
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipo.
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