IGT8D20 Key Features
- Low VCE(SAT)
- 2.3V typ @ 20A
- Ultra-fast turn-on
- 200 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling
- 20 amps @ 100°C
- 55 to 150
- 55 to 150
- Part: IGT8D20
- Manufacturer: GE
- Size: 290.75 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT8D21 | Insulated Gate Bipolar Transistor |
| IGT8E20 | Insulated Gate Bipolar Transistor |
| IGT8E21 | Insulated Gate Bipolar Transistor |
| IGT4D10 | Insulated Gate Bipolar Transistor |
| IGT4D11 | Insulated Gate Bipolar Transistor |
IGT8D20 Description
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar...