* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD2Z0
GE
184.75 KB
Field effect power transistor.
~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0. This series of N-Channel Enhanceme.
📁 Related Datasheet
IRFD2Z1 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD210 N-Channel Power MOSFET (Intersil Corporation)
IRFD210 Power MOSFET (International Rectifier)
IRFD210 Power MOSFET (Vishay)
IRFD210 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD210PBF HEXFET Power MOSFET (International Rectifier)
IRFD211 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD212 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD213 N-Channel Transistor (IOR)
IRFD213 MOSFET (Motorola)
