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IRFD2Z1 - FIELD EFFECT POWER TRANSISTOR

This page provides the datasheet information for the IRFD2Z1, a member of the IRFD2Z0 FIELD EFFECT POWER TRANSISTOR family.

Product Overview

GE

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IRFD2Z1 FIELD EFFECT POWER TRANSISTOR by GE - Datasheet Preview — Datasheet preview – IRFD2Z1

Datasheet Details

Part number	IRFD2Z1
Manufacturer	GE
File Size	184.75 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD2Z1 Datasheet
Additional preview pages of the IRFD2Z1 datasheet.

IRFD2Z1 Product details

Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

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Other Datasheets by GE

IRFD2Z0 - FIELD EFFECT POWER TRANSISTOR
IRFD210 - FIELD EFFECT POWER TRANSISTOR
IRFD211 - FIELD EFFECT POWER TRANSISTOR
IRFD212 - FIELD EFFECT POWER TRANSISTOR
IRFD213 - FIELD EFFECT POWER TRANSISTOR
IRFD220 - FIELD EFFECT POWER TRANSISTOR
IRFD221 - FIELD EFFECT POWER TRANSISTOR
IRFD222 - FIELD EFFECT POWER TRANSISTOR

Published: Feb 10, 2019 |