IRFD2Z0 Datasheet Field Effect Power Transistor

Manufacturer: GE

Overview: ~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Datasheet Details

Part number	IRFD2Z0
Manufacturer	GE
File Size	184.75 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD2Z0-GE.pdf

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

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