IRFD2Z1, IRFD2Z0 Datasheet - GE

IRFD2Z1 FIELD EFFECT POWER TRANSISTOR

~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe op.

IRFD2Z1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD2Z0-GE.pdf

IRFD2Z1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFD2Z1, IRFD2Z0. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFD2Z1, IRFD2Z0

Manufacturer:

File Size:

184.75 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFD2Z1, IRFD2Z0.
Please refer to the document for exact specifications by model.

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IRFD2Z1 IRFD2Z0 FIELD EFFECT POWER TRANSISTOR GE

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