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2SB1189 - Medium power transistor

Features

  • High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.
  • Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189.

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Full PDF Text Transcription

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Medium power transistor(-80V,-0.7A) FEATURES  High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.  Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189 ORDERING INFORMATION Type No. Marking 2SB1189 BDP/BDQ/BDR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.7 A PC Collector power dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E044 Rev.A www.gmesemi.com 1 Production specification Medium power transistor(-80V,-0.
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