2SD2150 Key Features
- Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A)
- Excellent current gain characteristics
- plements the 2SB1424
- 1 Single pulse Pw=10ms
- 55 to +150
- Measured using pulse current
- Part: 2SD2150
- Manufacturer: Galaxy Microelectronics
- Size: 231.58 KB
Other 2SD2150 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SD2150 | Transistor |
Kexin Semiconductor |
2SD2150 | NPN Transistors |
Jiangsu Changjiang Electronics |
2SD2150 | NPN Transistor |
Weitron Technology |
2SD2150 | NPN Transistor |
SeCoS Halbleitertechnologie GmbH |
2SD2150 | NPN Transistor |
2SD2150 Description
Product Specification LOW FREQUENCY TRANSISTER（20V，3A）.