Full PDF Text Transcription for 3DD13003 (Reference)
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3DD13003. For precise diagrams, and layout, please refer to the original PDF.
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES PC=1W(Mounted on ceramic substrate). High speed switching. Die size:1.34...
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Mounted on ceramic substrate). High speed switching. Die size:1.34*1.34 Small flat package. Pb Lead-free APPLICATIONS Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit ORDERING INFORMATION Type No. Marking 3DD13003 13003 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current -Continuous 1.3 PC Collector Dissipation 0.5 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V
3DD13003 Datasheet
