BL2301 transistor equivalent, p-channel enhancement mode field effect transistor.
z RDS(ON)≤110mΩ@VGS=-4.5V.
Pb
z RDS(ON)≤150mΩ@VGS=-2.5V.
Lead-free
z Super high density cell design for extremely low RDS(ON).
APPLICATIONS
z Power Management in No.
z Power Management in Note book.
z Portable Equipment.
z Battery Powered System.
z Load Switch.
z DSC.
ORDERING IN.
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