BL2304 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor.
BL2304 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = 30V
- ID = 2.6A
- RDS(ON) < 70mΩ (VGS = 10V)
- Part: BL2304
- Manufacturer: Galaxy Microelectronics
- Size: 390.84 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL2300 | N-Channel Enhancement Mode MOSFET |
| BL2300-3L | N-Channel Enhancement Mode MOSFET |
| BL2301 | P-Channel Enhancement Mode Field Effect Transistor |
| BL2301W | P-Channel Enhancement MOSFET |
| BL2302 | N-Channel Enhancement Mode Field Effect Transistor |