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BL2308 - N-Channel Power Mosfet

Features

  • RDS(ON)≤270mΩ@VGS=10V. Pb.
  • RDS(ON)≤340mΩ@VGS=4.5V. Lead-free.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Electrostatic Sensitive Devices.
  • MSL 1.

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Full PDF Text Transcription

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Production specification N-Channel 60V(D-S) MOSFET FEATURES  RDS(ON)≤270mΩ@VGS=10V. Pb  RDS(ON)≤340mΩ@VGS=4.5V. Lead-free  Super high density cell design for extremely low RDS(ON).  Exceptional on-resistance and maximum DC current capability.  Electrostatic Sensitive Devices.  MSL 1 APPLICATIONS  Power Management in Note book.  DC/DC Converter.  Load Switch. ORDERING INFORMATION Type No.
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