BL3400 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400.
BL3400 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = 30V
- ID = 5.7A（VGS = 10V）
- RDS(ON) < 26.5mΩ (VGS = 10V)
- Part: BL3400
- Manufacturer: Galaxy Microelectronics
- Size: 334.67 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL3401 | P-Channel High Density Trench MOSDET |
| BL3401L | P-Channel MOSDET |
| BL3402 | N-Channel Power Mosfet |
| BL3404 | N-Channel Power Mosfet |
| BL3407 | P-Channel Power Mosfet |