BL3407 Description
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407.
BL3407 Key Features
- Electrostatic Sensitive Devices
- VDS (V) =
- RDS(ON) < 52mΩ (VGS = -10V)
- Part: BL3407
- Manufacturer: Galaxy Microelectronics
- Size: 298.20 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL3407E | P-Channel Enhancement Mode MOSFET |
| BL3400 | N-Channel Power Mosfet |
| BL3401 | P-Channel High Density Trench MOSDET |
| BL3401L | P-Channel MOSDET |
| BL3402 | N-Channel Power Mosfet |