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BL6N60 - N-Channel Power Mosfet

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤1.7Ω). Pb Lead-free.
  • LowGateCharge(TypicalData:19nC).
  • Low Reverse transfer capacitances(Typical:8pF).
  • 100% Single Pulse avalanche energy Test.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET FEATURES  Fast Switching.  Low ON Resistance(Rdson≤1.7Ω). Pb Lead-free  LowGateCharge(TypicalData:19nC).  Low Reverse transfer capacitances(Typical:8pF).  100% Single Pulse avalanche energy Test. Applications: Power switch circuit of adaptor and charger. Production specification BL6N60 TO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 600 VGSS Gate -Source voltage ±30 ID Continuous Drain Current 6.0 IDM Pulsed Drain Current a1 24 EAS Single Pulse Avalanche Energy a2 250 PD Power Dissipation Derating Factor above 25°C 83 0.67 RθJA Junction-to-Ambient 62 RθJC Junction-to-Case 1.
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