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BL6N65D - N-Channel Power Mosfet

Download the BL6N65D datasheet PDF (BL6N65I included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel power mosfet.

Features

  • RDS(ON) =1.7Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 20 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 10 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BL6N65I-GME.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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6A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =1.7Ω@ VGS = 10V  Ultra low gate charge ( typical 20 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 10 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL6N65I/BL6N65D MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-251 TO-252 Value 650 ±30 6.2 24.8 440 13 4.5 40 62.
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