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BL6N65F - N-Channel Power Mosfet

Features

  • RDS(ON) =1.7Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 20 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 10 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL6N65F.

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Full PDF Text Transcription

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6A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =1.7Ω@ VGS = 10V  Ultra low gate charge ( typical 20 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 10 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL6N65F MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature ITO-220AB Value 650 ±30 6.2 24.8 440 13 4.5 40 62.
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