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N-Channel Power MOSFET
FEATURES
RDS(ON)=1.6Ω @ VGS=10V, ID=3A Low gate charge (Typically 51nC) Low CRSS (Typically 45pF) High switching speed.
Production specification
BL6N70
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
TO-220AB
Value
Unit
VDS Drain-Source Voltage
700 V
VGS ID IDM
PD
EAS EAR RθJA RθJC Tj Tstg
Gate -Source Voltage Drain Current Continuous at
Drain Current(pulsed)Note1
TC=25℃ TC=100°C
Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3))
Avalanche Energy (Repetitive(Note 2))
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Junction and StorageTemperature Range
±30 V 6
A 4 24 A
100 W 1.04 W/℃ 100 mJ
13 mJ
62.5 ℃/W
0.96 ℃/W
-55 to +150 ℃
S058 Rev.A
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BL6N70 Datasheet
