Datasheet4U Logo Datasheet4U.com

BL6N70F - N-Channel Power Mosfet

Features

  • RDS(ON)=1.6Ω @ VGS=10V, ID=3A.
  • Low gate charge (Typically 51nC).
  • Low CRSS (Typically 45pF).
  • High switching speed. Production specification BL6N70F ITO-220AB.

📥 Download Datasheet

📁 Similar Datasheet

  • BL600 - smartBASIC Module User Manual (Laird Technologies)
  • BL602 - Wi-Fi + BLE combo chipset (Bouffalo Lab)
  • BL604 - Wi-Fi + BLE combo chipset (Bouffalo Lab)
  • BL6121 - Infrared remote control transmitter (SHANGHAI BELLING)
  • BL6122 - Infrared remote control transmitter (SHANGHAI BELLING)
  • BL6203 - 1.25 Watt Fully Differential Audio Power Amplifier (BELLING)
  • BL6211 - 1.25 Watt Fully Differential Audio Power Amplifier (BELLING)
  • BL6212 - 1.3 Watt Audio Power Amplifier (BELLING)
  • BL6212CP - 1.3 Watt Audio Power Amplifier (BELLING)
  • BL6213 - 1.2 Watt Audio Power Amplifier (BELLING)
Other Datasheets by GME

Full PDF Text Transcription

Click to expand full text
N-Channel Power MOSFET FEATURES  RDS(ON)=1.6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically 45pF)  High switching speed. Production specification BL6N70F ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 700 Unit V VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at Drain Current(pulsed)Note1 ±30 TC=25℃ 6 TC=100°C 4 24 V A A Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3)) 100 W 1.04 W/℃ 100 mJ Avalanche Energy (Repetitive(Note 2)) 13 mJ Thermal Resistance,Junction-to-Ambient 62.5 ℃/W Thermal Resistance,Junction-to-Case 0.96 ℃/W Junction and StorageTemperature Range -55 to +150 ℃ S058 Rev.A www.gmesemi.
Published: |