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BL6N80F - N-Channel Power Mosfet

Features

  • 6A, 800V, RDS(on) = 2.5Ω @VGS = 10 V.
  • Improved dv/dt Capability.
  • Fast Switching.
  • 100% Avalanche Tested Pb Lead-free Production specification BL6N80F ITO-220AB.

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Full PDF Text Transcription

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6A,800V N-Channel Power Mosfet FEATURES  6A, 800V, RDS(on) = 2.5Ω @VGS = 10 V  Improved dv/dt Capability  Fast Switching  100% Avalanche Tested Pb Lead-free Production specification BL6N80F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID IDM EAS EAR dv/dt Continuous Drain Current Pulsed Drain Current Avalanche Energy Peak Diode Recovery dv/dt Single Pulsed Repetitive PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 800 ±30 6 22 680 15.8 4.5 51 62.5 2.45 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃/W ℃ ℃ S075 Rev.A www.gmesemi.
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